auf Bestellung 5817 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.42 EUR |
| 10+ | 3.68 EUR |
| 100+ | 2.92 EUR |
| 250+ | 2.69 EUR |
| 500+ | 2.46 EUR |
| 1000+ | 2.11 EUR |
| 2500+ | 1.99 EUR |
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Technische Details IQE006NE2LM5CGSCATMA1 Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 9-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc), Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-WHTFN-9-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V.
Weitere Produktangebote IQE006NE2LM5CGSCATMA1 nach Preis ab 2.01 EUR bis 4.45 EUR
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IQE006NE2LM5CGSCATMA1 | Hersteller : Infineon Technologies |
 Description: OPTIMOS LOWVOLTAGE POWER MOSFETPackaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
auf Bestellung 4434 Stücke: Lieferzeit 10-14 Tag (e) |
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IQE006NE2LM5CGSCATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 47A 9-Pin WHTFN EP T/R |
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IQE006NE2LM5CGSCATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 47A 9-Pin WHTFN EP T/R |
Produkt ist nicht verfügbar |
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| IQE006NE2LM5CGSCATMA1 | Hersteller : Infineon Technologies |
SP005419125 |
Produkt ist nicht verfügbar |
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IQE006NE2LM5CGSCATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFET Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
Produkt ist nicht verfügbar |