IQE030N06NM5CGSCATMA1 Infineon Technologies
auf Bestellung 5820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.59 EUR |
10+ | 3.85 EUR |
25+ | 3.64 EUR |
100+ | 3.13 EUR |
250+ | 2.96 EUR |
500+ | 2.78 EUR |
1000+ | 2.39 EUR |
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Technische Details IQE030N06NM5CGSCATMA1 Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 9-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 50µA, Supplier Device Package: PG-WHTFN-9-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V.
Weitere Produktangebote IQE030N06NM5CGSCATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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IQE030N06NM5CGSCATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 21A 9-Pin WHTFN EP T/R |
Produkt ist nicht verfügbar |
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IQE030N06NM5CGSCATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFET Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V |
Produkt ist nicht verfügbar |
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IQE030N06NM5CGSCATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V |
Produkt ist nicht verfügbar |