IQE046N08LM5CGSCATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.66 EUR |
10+ | 3.88 EUR |
100+ | 3.09 EUR |
500+ | 2.61 EUR |
1000+ | 2.22 EUR |
2000+ | 2.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IQE046N08LM5CGSCATMA1 Infineon Technologies
Description: INFINEON - IQE046N08LM5CGSCATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 99 A, 0.004 ohm, WHTFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: YES, Dauer-Drainstrom Id: 99A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.3V, euEccn: NLR, Verlustleistung: 100W, Bauform - Transistor: WHTFN, Anzahl der Pins: 9Pin(s), Produktpalette: OptiMOS 5 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.004ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote IQE046N08LM5CGSCATMA1 nach Preis ab 2.13 EUR bis 4.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IQE046N08LM5CGSCATMA1 | Hersteller : Infineon Technologies | MOSFET |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IQE046N08LM5CGSCATMA1 | Hersteller : INFINEON |
Description: INFINEON - IQE046N08LM5CGSCATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 99 A, 0.004 ohm, WHTFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 99A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: WHTFN Anzahl der Pins: 9Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2928 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
IQE046N08LM5CGSCATMA1 | Hersteller : Infineon Technologies | TRENCH 40<-<100V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IQE046N08LM5CGSCATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS 5 POWER-TRANSISTOR 60V Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 47µA Supplier Device Package: PG-WHTFN-9 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V |
Produkt ist nicht verfügbar |