IRL40B215 Infineon Technologies
auf Bestellung 503 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
152+ | 1.02 EUR |
250+ | 0.95 EUR |
500+ | 0.88 EUR |
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Technische Details IRL40B215 Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V, Power Dissipation (Max): 143W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 100µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V.
Weitere Produktangebote IRL40B215 nach Preis ab 1.78 EUR bis 2.36 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRL40B215 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V |
auf Bestellung 6200 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL40B215 | Hersteller : Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl |
auf Bestellung 709 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL40B215 | Hersteller : INFINEON |
Description: INFINEON - IRL40B215 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0022 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 120 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 143 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0022 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 2.4 SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL40B215 | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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IRL40B215 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 116A Power dissipation: 143W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRL40B215 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRL40B215 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 116A Power dissipation: 143W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |