auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.46 EUR |
| 250+ | 2.29 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.76 EUR |
| 2500+ | 1.69 EUR |
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Technische Details ISC078N12NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V, Power Dissipation (Max): 3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 49.6µA, Supplier Device Package: SuperSO8, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V.
Weitere Produktangebote ISC078N12NM6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| ISC078N12NM6ATMA1 | Hersteller : Infineon Technologies |
 N-channel MOSFET |
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ISC078N12NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 49.6µA Supplier Device Package: SuperSO8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V |
Produkt ist nicht verfügbar |
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ISC078N12NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 49.6µA Supplier Device Package: SuperSO8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V |
Produkt ist nicht verfügbar |