IXBH42N170A IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 27.99 EUR |
| 10+ | 27.58 EUR |
| 30+ | 26.97 EUR |
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Technische Details IXBH42N170A IXYS
Description: IGBT 1700V 42A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 330 ns, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 19ns/200ns, Switching Energy: 3.43mJ (on), 430µJ (off), Test Condition: 850V, 21A, 1Ohm, 15V, Gate Charge: 188 nC, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 265 A, Power - Max: 357 W.
Weitere Produktangebote IXBH42N170A nach Preis ab 26.97 EUR bis 47.94 EUR
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IXBH42N170A | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3 Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 188nC Kind of package: tube Turn-on time: 33ns Turn-off time: 308ns Features of semiconductor devices: high voltage |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBH42N170A | Hersteller : IXYS |
Description: IGBT 1700V 42A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 330 ns Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 19ns/200ns Switching Energy: 3.43mJ (on), 430µJ (off) Test Condition: 850V, 21A, 1Ohm, 15V Gate Charge: 188 nC Current - Collector (Ic) (Max): 42 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 265 A Power - Max: 357 W |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBH42N170A | Hersteller : IXYS |
IGBT Transistors BIMOSET 42A 1700V |
auf Bestellung 360 Stücke: Lieferzeit 255-259 Tag (e) |
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