IXBH6N170 IXYS
Hersteller: IXYS
Description: IGBT 1700V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.08 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A
Supplier Device Package: TO-247AD
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 75 W
Description: IGBT 1700V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.08 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A
Supplier Device Package: TO-247AD
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 75 W
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.92 EUR |
30+ | 15.1 EUR |
120+ | 13.51 EUR |
510+ | 11.92 EUR |
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Technische Details IXBH6N170 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3, Mounting: THT, Power dissipation: 75W, Kind of package: tube, Features of semiconductor devices: high voltage, Gate charge: 17nC, Technology: BiMOSFET™, Case: TO247-3, Collector-emitter voltage: 1.7kV, Gate-emitter voltage: ±20V, Collector current: 6A, Pulsed collector current: 36A, Turn-on time: 104ns, Turn-off time: 700ns, Type of transistor: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBH6N170 nach Preis ab 13.08 EUR bis 19.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXBH6N170 | Hersteller : IXYS | IGBT Transistors 12 Amps 1700V 3.6 Rds |
auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBH6N170 Produktcode: 83906 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IXBH6N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3 Mounting: THT Power dissipation: 75W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 17nC Technology: BiMOSFET™ Case: TO247-3 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 36A Turn-on time: 104ns Turn-off time: 700ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXBH6N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3 Mounting: THT Power dissipation: 75W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 17nC Technology: BiMOSFET™ Case: TO247-3 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 36A Turn-on time: 104ns Turn-off time: 700ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |