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IXBT16N170A

IXBT16N170A IXYS


IXBH(T)16N170A.pdf Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.86 EUR
30+ 15.63 EUR
Mindestbestellmenge: 5
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Technische Details IXBT16N170A IXYS

Description: IGBT 1700V 16A TO268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 360 ns, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A, Supplier Device Package: TO-268AA, Td (on/off) @ 25°C: 15ns/160ns, Switching Energy: 1.2mJ (off), Test Condition: 1360V, 10A, 10Ohm, 15V, Gate Charge: 65 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 150 W.

Weitere Produktangebote IXBT16N170A nach Preis ab 15.86 EUR bis 31.2 EUR

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IXBT16N170A IXBT16N170A Hersteller : IXYS IXBH(T)16N170A.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+15.86 EUR
Mindestbestellmenge: 5
IXBT16N170A IXBT16N170A Hersteller : IXYS ixyss01891_1-2272398.pdf IGBT Transistors 1700V 16A
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+31.2 EUR
10+ 28.67 EUR
30+ 27.47 EUR
120+ 24.22 EUR
510+ 21.54 EUR
1020+ 20.31 EUR
2520+ 19.62 EUR
IXBT16N170A IXBT16N170A Hersteller : IXYS littelfuse_discrete_igbts_bimosfet_ixb_16n170a_datasheet.pdf.pdf Description: IGBT 1700V 16A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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