IXBT16N170A IXYS
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 15.86 EUR |
30+ | 15.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXBT16N170A IXYS
Description: IGBT 1700V 16A TO268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 360 ns, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A, Supplier Device Package: TO-268AA, Td (on/off) @ 25°C: 15ns/160ns, Switching Energy: 1.2mJ (off), Test Condition: 1360V, 10A, 10Ohm, 15V, Gate Charge: 65 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 150 W.
Weitere Produktangebote IXBT16N170A nach Preis ab 15.86 EUR bis 31.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXBT16N170A | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 65nC Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IXBT16N170A | Hersteller : IXYS | IGBT Transistors 1700V 16A |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IXBT16N170A | Hersteller : IXYS |
Description: IGBT 1700V 16A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 360 ns Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A Supplier Device Package: TO-268AA Td (on/off) @ 25°C: 15ns/160ns Switching Energy: 1.2mJ (off) Test Condition: 1360V, 10A, 10Ohm, 15V Gate Charge: 65 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W |
Produkt ist nicht verfügbar |