IXBX75N170 IXYS
Hersteller: IXYSDescription: IGBT 1700V 200A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: PLUS247™-3
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 102.59 EUR |
| 30+ | 90.16 EUR |
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Technische Details IXBX75N170 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™, Mounting: THT, Gate-emitter voltage: ±20V, Collector current: 75A, Collector-emitter voltage: 1.7kV, Power dissipation: 1.04kW, Gate charge: 350nC, Technology: BiMOSFET™; FRED, Features of semiconductor devices: high voltage, Pulsed collector current: 580A, Type of transistor: IGBT, Turn-on time: 277ns, Kind of package: tube, Case: PLUS247™, Turn-off time: 840ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBX75N170 nach Preis ab 105.99 EUR bis 116.6 EUR
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IXBX75N170 | Hersteller : IXYS |
IGBT Transistors BIMOSFETS 1700V 200A |
auf Bestellung 60 Stücke: Lieferzeit 465-469 Tag (e) |
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IXBX75N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.7kV Power dissipation: 1.04kW Gate charge: 350nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 580A Type of transistor: IGBT Turn-on time: 277ns Kind of package: tube Case: PLUS247™ Turn-off time: 840ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXBX75N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.7kV Power dissipation: 1.04kW Gate charge: 350nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 580A Type of transistor: IGBT Turn-on time: 277ns Kind of package: tube Case: PLUS247™ Turn-off time: 840ns |
Produkt ist nicht verfügbar |