auf Bestellung 550 Stücke:
Lieferzeit 467-471 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 15.63 EUR |
| 10+ | 13.41 EUR |
| 50+ | 12.14 EUR |
| 100+ | 11.16 EUR |
| 250+ | 10.51 EUR |
Produktrezensionen
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Technische Details IXFA3N120 IXYS
Description: MOSFET N-CH 1200V 3A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.5mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Weitere Produktangebote IXFA3N120 nach Preis ab 14.84 EUR bis 16.78 EUR
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IXFA3N120 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA3N120 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA3N120 Produktcode: 83348 |
Verschiedene Bauteile > Other components 3 |
Produkt ist nicht verfügbar
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IXFA3N120 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| IXFA3N120 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXFA3N120 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263 Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFA3N120 | Hersteller : IXYS |
Description: MOSFET N-CH 1200V 3A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFA3N120 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263 Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |