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IXFB30N120P

IXFB30N120P Littelfuse Inc.


littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb30n120p_datasheet.pdf.pdf Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 30A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
auf Bestellung 302 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+65.82 EUR
25+ 51.05 EUR
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Technische Details IXFB30N120P Littelfuse Inc.

Description: MOSFET N-CH 1200V 30A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V.

Weitere Produktangebote IXFB30N120P nach Preis ab 59.49 EUR bis 68.66 EUR

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IXFB30N120P IXFB30N120P Hersteller : IXYS media-3321177.pdf MOSFETs 30 Amps 1200V 0.35 Rds
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+68.66 EUR
25+ 59.49 EUR
IXFB30N120P IXFB30N120P Hersteller : Littelfuse te_mosfets_n-channel_hiperfets_ixfb30n120p_datasheet.pdf.pdf Trans MOSFET N-CH 1.2KV 30A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB30N120P IXFB30N120P Hersteller : IXYS IXFB30N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB30N120P IXFB30N120P Hersteller : IXYS IXFB30N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar