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IXFB44N100P

IXFB44N100P IXYS


media-3321539.pdf Hersteller: IXYS
MOSFET 44 Amps 1000V 0.22 Rds
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10+ 46.13 EUR
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Technische Details IXFB44N100P IXYS

Description: MOSFET N-CH 1000V 44A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V.

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IXFB44N100P
Produktcode: 199488
littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb44n100p_datasheet.pdf.pdf Transistoren > MOSFET N-CH
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IXFB44N100P IXFB44N100P Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
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IXFB44N100P IXFB44N100P Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
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IXFB44N100P IXFB44N100P Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
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IXFB44N100P IXFB44N100P Hersteller : IXYS IXFB44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB44N100P IXFB44N100P Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb44n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
IXFB44N100P IXFB44N100P Hersteller : IXYS IXFB44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar