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IXFH120N25T

IXFH120N25T IXYS

IXFH120N25T.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.67 EUR
6+ 12.77 EUR
10+ 12.27 EUR
Mindestbestellmenge: 5
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Technische Details IXFH120N25T IXYS

Description: MOSFET N-CH 250V 120A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 60A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V.

Weitere Produktangebote IXFH120N25T nach Preis ab 12.77 EUR bis 22.8 EUR

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IXFH120N25T IXFH120N25T Hersteller : IXYS IXFH120N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.67 EUR
6+ 12.77 EUR
Mindestbestellmenge: 5
IXFH120N25T IXFH120N25T Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_120n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 60A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+22.8 EUR
Mindestbestellmenge: 30
IXFH120N25T IXFH120N25T Hersteller : Littelfuse _mosfets_n-channel_trench_gate_ixf_120n25t_datasheet.pdf.pdf Trans MOSFET N-CH 250V 120A 3-Pin(3+Tab) TO-247AD
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IXFH120N25T IXFH120N25T Hersteller : IXYS ixyss05870_1-2272684.pdf MOSFET Trench HiperFETs Power MOSFETs
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