auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.66 EUR |
10+ | 8.45 EUR |
30+ | 7.66 EUR |
120+ | 6.76 EUR |
270+ | 6.65 EUR |
510+ | 5.91 EUR |
1020+ | 5.02 EUR |
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Technische Details IXFH16N50P IXYS
Description: MOSFET N-CH 500V 16A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V.
Weitere Produktangebote IXFH16N50P nach Preis ab 9.66 EUR bis 9.66 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFH16N50P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 16A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH16N50P | Hersteller : Littelfuse | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH16N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFH16N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |