IXFH18N60P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 7.14 EUR |
12+ | 6.42 EUR |
15+ | 4.82 EUR |
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Technische Details IXFH18N60P IXYS
Description: MOSFET N-CH 600V 18A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Weitere Produktangebote IXFH18N60P nach Preis ab 4.82 EUR bis 10.03 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFH18N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH18N60P | Hersteller : IXYS | MOSFET 600V 18A |
auf Bestellung 2766 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH18N60P | Hersteller : Littelfuse | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH18N60P | Hersteller : Littelfuse | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH18N60P | Hersteller : Littelfuse | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH18N60P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V 18A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
Produkt ist nicht verfügbar |