auf Bestellung 2392 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.38 EUR |
10+ | 17.09 EUR |
30+ | 16.61 EUR |
60+ | 15.68 EUR |
120+ | 14.77 EUR |
270+ | 14.29 EUR |
510+ | 14.01 EUR |
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Technische Details IXFH18N90P IXYS
Description: MOSFET N-CH 900V 18A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V.
Weitere Produktangebote IXFH18N90P
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXFH18N90P | Hersteller : Littelfuse | Trans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXFH18N90P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 18A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.6Ω Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFH18N90P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 900V 18A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFH18N90P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 18A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.6Ω Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |