IXKH20N60C5 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Anzahl je Verpackung: 1 Stücke
auf Bestellung 244 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.58 EUR |
12+ | 6.12 EUR |
13+ | 5.79 EUR |
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Technische Details IXKH20N60C5 IXYS
Description: MOSFET N-CH 600V 20A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 1.1mA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V.
Weitere Produktangebote IXKH20N60C5 nach Preis ab 5.79 EUR bis 8.58 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXKH20N60C5 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO247-3 On-state resistance: 0.2Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
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IXKH20N60C5 | Hersteller : IXYS | MOSFET 20 Amps 600V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IXKH20N60C5 | Hersteller : Littelfuse | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXKH20N60C5 | Hersteller : IXYS |
Description: MOSFET N-CH 600V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V |
Produkt ist nicht verfügbar |