IXTA06N120P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 1200V 600MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 32Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.25 EUR |
| 50+ | 5.75 EUR |
| 100+ | 4.93 EUR |
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Technische Details IXTA06N120P IXYS
Description: MOSFET N-CH 1200V 600MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), Rds On (Max) @ Id, Vgs: 32Ohm @ 300mA, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V.
Weitere Produktangebote IXTA06N120P nach Preis ab 5.79 EUR bis 7.32 EUR
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Verfügbarkeit |
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IXTA06N120P | Hersteller : IXYS |
MOSFET 0.6 Amps 1200V 32 Rds |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA06N120P | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXTA06N120P - MOSFET, N-CH, 1.2KV, 0.6A, TO-263 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 600mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: Polar Series productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 27ohm directShipCharge: 25 SVHC: No SVHC (17-Dec-2014) |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA06N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA06N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.6A Power dissipation: 42W Case: TO263 On-state resistance: 34Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA06N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA06N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.6A Power dissipation: 42W Case: TO263 On-state resistance: 34Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
Produkt ist nicht verfügbar |