IXTA120P065T IXYS
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: TO263
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: TO263
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.42 EUR |
14+ | 5.15 EUR |
15+ | 4.86 EUR |
500+ | 4.69 EUR |
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Technische Details IXTA120P065T IXYS
Description: MOSFET P-CH 65V 120A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V, Power Dissipation (Max): 298W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V.
Weitere Produktangebote IXTA120P065T nach Preis ab 4.86 EUR bis 10.45 EUR
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IXTA120P065T | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263 Power dissipation: 298W Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Mounting: SMD Case: TO263 Reverse recovery time: 53ns Drain-source voltage: -65V Drain current: -120A On-state resistance: 10mΩ Type of transistor: P-MOSFET |
auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA120P065T | Hersteller : IXYS | MOSFET -120 Amps -65V 0.01 Rds |
auf Bestellung 7797 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA120P065T | Hersteller : Littelfuse | Trans MOSFET P-CH 65V 120A 3-Pin(2+Tab) D2PAK |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA120P065T | Hersteller : IXYS |
Description: MOSFET P-CH 65V 120A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V |
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