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IXTA120P065T

IXTA120P065T IXYS

IXT_120P065T.pdf Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 295 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.19 EUR
12+ 6.46 EUR
14+ 5.15 EUR
15+ 4.88 EUR
Mindestbestellmenge: 10
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Technische Details IXTA120P065T IXYS

Description: MOSFET P-CH 65V 120A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V, Power Dissipation (Max): 298W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V.

Weitere Produktangebote IXTA120P065T nach Preis ab 4.88 EUR bis 10.45 EUR

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IXTA120P065T IXTA120P065T Hersteller : IXYS IXT_120P065T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.19 EUR
12+ 6.46 EUR
14+ 5.15 EUR
15+ 4.88 EUR
Mindestbestellmenge: 10
IXTA120P065T IXTA120P065T Hersteller : IXYS media-3319649.pdf MOSFET -120 Amps -65V 0.01 Rds
auf Bestellung 7797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.45 EUR
10+ 9.47 EUR
100+ 7.83 EUR
250+ 7.6 EUR
500+ 6.9 EUR
IXTA120P065T IXTA120P065T Hersteller : Littelfuse se_discrete_mosfets_p-channel_ixt_120p065t_datasheet.pdf.pdf Trans MOSFET P-CH 65V 120A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA120P065T IXTA120P065T Hersteller : IXYS littelfuse_discrete_mosfets_p-channel_ixt_120p065t_datasheet.pdf.pdf Description: MOSFET P-CH 65V 120A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
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