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IXTA140N12T2

IXTA140N12T2 IXYS


littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n12t2_datasheet.pdf.pdf Hersteller: IXYS
Description: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
auf Bestellung 1400 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+8.46 EUR
Mindestbestellmenge: 50
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Technische Details IXTA140N12T2 IXYS

Description: MOSFET N-CH 120V 140A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V, Power Dissipation (Max): 577W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V.

Weitere Produktangebote IXTA140N12T2 nach Preis ab 7.15 EUR bis 8.94 EUR

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Preis ohne MwSt
IXTA140N12T2 IXTA140N12T2 Hersteller : IXYS IXTA(P)140N12T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+8.94 EUR
10+ 7.15 EUR
Mindestbestellmenge: 8
IXTA140N12T2 IXTA140N12T2 Hersteller : IXYS IXTA(P)140N12T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+8.94 EUR
Mindestbestellmenge: 8
IXTA140N12T2 IXTA140N12T2 Hersteller : Littelfuse media.pdf Power MOSFET
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IXTA140N12T2 IXTA140N12T2 Hersteller : IXYS media-3320606.pdf MOSFET MSFT N-CH TRENCH GATE -GEN2
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