auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.2 EUR |
10+ | 10.56 EUR |
50+ | 9.94 EUR |
100+ | 9.26 EUR |
250+ | 9.06 EUR |
500+ | 8.68 EUR |
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Technische Details IXTA140P05T IXYS
Description: MOSFET P-CH 50V 140A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V, Power Dissipation (Max): 298W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V.
Weitere Produktangebote IXTA140P05T nach Preis ab 7.85 EUR bis 12.46 EUR
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IXTA140P05T | Hersteller : IXYS |
Description: MOSFET P-CH 50V 140A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V |
auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA140P05T | Hersteller : Littelfuse | Trans MOSFET P-CH 50V 140A 3-Pin(2+Tab) TO-263AA |
Produkt ist nicht verfügbar |
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IXTA140P05T | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA140P05T | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
Produkt ist nicht verfügbar |