auf Bestellung 3570 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 15.4 EUR |
| 10+ | 14.33 EUR |
| 50+ | 11.39 EUR |
| 100+ | 10.12 EUR |
| 250+ | 9.98 EUR |
| 500+ | 9.4 EUR |
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Technische Details IXTA1N200P3HV IXYS
Description: MOSFET N-CH 2000V 1A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V.
Weitere Produktangebote IXTA1N200P3HV
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IXTA1N200P3HV | Hersteller : Littelfuse |
 Trans MOSFET N-CH 2KV 1A 3-Pin(2+Tab) TO-263HV |
Produkt ist nicht verfügbar |
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IXTA1N200P3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO263HV On-state resistance: 40Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA1N200P3HV | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 2000V 1A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA1N200P3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO263HV On-state resistance: 40Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs |
Produkt ist nicht verfügbar |