IXTA62N15P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 150V 62A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.03 EUR |
| 50+ | 6.36 EUR |
| 100+ | 5.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTA62N15P IXYS
Description: MOSFET N-CH 150V 62A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V, Power Dissipation (Max): 350W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V.
Weitere Produktangebote IXTA62N15P nach Preis ab 5.14 EUR bis 8.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTA62N15P | Hersteller : IXYS |
MOSFET 62 Amps 150V 0.04 Rds |
auf Bestellung 323 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IXTA62N15P | Hersteller : Littelfuse |
Trans MOSFET N-CH 150V 62A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
|||||||||||
 |
IXTA62N15P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 62A Power dissipation: 350W Case: TO263 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IXTA62N15P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 62A Power dissipation: 350W Case: TO263 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |