IXTB62N50L IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 63.86 EUR |
| 25+ | 62.76 EUR |
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Technische Details IXTB62N50L IXYS
Description: MOSFET N-CH 500V 62A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V.
Weitere Produktangebote IXTB62N50L nach Preis ab 63.86 EUR bis 102.7 EUR
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IXTB62N50L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 62A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 550nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTB62N50L | Hersteller : IXYS |
Description: MOSFET N-CH 500V 62A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTB62N50L | Hersteller : IXYS |
MOSFET 62 Amps 500V 0.1 Rds |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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