auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 32.96 EUR |
| 10+ | 29.04 EUR |
| 30+ | 28.25 EUR |
| 60+ | 26.68 EUR |
| 120+ | 25.12 EUR |
| 270+ | 24.32 EUR |
| 510+ | 22.77 EUR |
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Technische Details IXXX110N65B4H1 IXYS
Description: IGBT 650V 240A 880W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 38ns/156ns, Switching Energy: 2.2mJ (on), 1.05mJ (off), Test Condition: 400V, 55A, 2Ohm, 15V, Gate Charge: 183 nC, Part Status: Active, Current - Collector (Ic) (Max): 240 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 630 A, Power - Max: 880 W.
Weitere Produktangebote IXXX110N65B4H1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXXX110N65B4H1 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXXX110N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 570A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXXX110N65B4H1 | Hersteller : IXYS |
Description: IGBT 650V 240A 880W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 630 A Power - Max: 880 W |
Produkt ist nicht verfügbar |
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IXXX110N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 570A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns |
Produkt ist nicht verfügbar |