auf Bestellung 331 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 40.78 EUR |
10+ | 36.22 EUR |
30+ | 33.79 EUR |
60+ | 32.75 EUR |
120+ | 32.65 EUR |
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Technische Details IXXX160N65B4 IXYS
Description: IGBT 650V 310A 940W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 52ns/220ns, Switching Energy: 3.3mJ (on), 1.88mJ (off), Test Condition: 400V, 80A, 1Ohm, 15V, Gate Charge: 425 nC, Part Status: Active, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 860 A, Power - Max: 940 W.
Weitere Produktangebote IXXX160N65B4 nach Preis ab 27.23 EUR bis 41.06 EUR
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IXXX160N65B4 | Hersteller : IXYS |
Description: IGBT 650V 310A 940W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 52ns/220ns Switching Energy: 3.3mJ (on), 1.88mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 425 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 860 A Power - Max: 940 W |
auf Bestellung 521 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXX160N65B4 | Hersteller : Littelfuse | Trans IGBT Chip N-CH 650V 310A 940000mW 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXXX160N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 860A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 93ns Turn-off time: 380ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXXX160N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 860A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 93ns Turn-off time: 380ns |
Produkt ist nicht verfügbar |