IXYH12N250CV1HV IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 80A
Turn-on time: 32ns
Turn-off time: 333ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXYH12N250CV1HV IXYS
Description: IGBT 2500V 28A TO247HV, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 16 ns, Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A, Supplier Device Package: TO-247 (IXYH), Td (on/off) @ 25°C: 12ns/167ns, Switching Energy: 3.56mJ (on), 1.7mJ (off), Test Condition: 1250V, 12A, 10Ohm, 15V, Gate Charge: 56 nC, Part Status: Active, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 310 W.
Weitere Produktangebote IXYH12N250CV1HV
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IXYH12N250CV1HV | Hersteller : IXYS |
Description: IGBT 2500V 28A TO247HV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W |
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IXYH12N250CV1HV | Hersteller : IXYS |
IGBT Modules IGBT XPT-HI VOLTAGE |
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IXYH12N250CV1HV | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV Case: TO247HV Mounting: THT Kind of package: tube Type of transistor: IGBT Power dissipation: 310W Features of semiconductor devices: high voltage Gate charge: 56nC Technology: XPT™ Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 80A Turn-on time: 32ns Turn-off time: 333ns |
Produkt ist nicht verfügbar |