Produkte > IXYS > IXYH20N65B3

IXYH20N65B3 IXYS


media?resourcetype=datasheets&itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IXYH20N65B3 IXYS

Description: DISC IGBT XPT-GENX3 TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 12ns/103ns, Switching Energy: 500µJ (on), 450µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 29 nC, Part Status: Active, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 108 A, Power - Max: 230 W.

Weitere Produktangebote IXYH20N65B3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXYH20N65B3 IXYH20N65B3 Hersteller : IXYS media-3319831.pdf IGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar