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IXYP24N100C4

IXYP24N100C4 IXYS

media?resourcetype=datasheets&itemid=9e764d41-4809-4a1d-9928-1cb6ca6c9107&filename=littelfuse_discrete_igbts_xpt_ixy_24n100c4_datasheet.pdf Hersteller: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
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300+9.87 EUR
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Technische Details IXYP24N100C4 IXYS

Description: IGBT DISCRETE TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 35 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A, Supplier Device Package: TO-220, IGBT Type: PT, Td (on/off) @ 25°C: 15ns/147ns, Switching Energy: 3.6mJ (on), 1mJ (off), Test Condition: 800V, 24A, 10Ohm, 15V, Gate Charge: 43 nC, Current - Collector (Ic) (Max): 76 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 132 A, Power - Max: 375 W.

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IXYP24N100C4 IXYP24N100C4 Hersteller : IXYS media-3322136.pdf IGBT Transistors IGBT DISCRETE
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