IXYX120N120B3 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 33.55 EUR |
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Technische Details IXYX120N120B3 IXYS
Description: IGBT, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 30ns/340ns, Switching Energy: 9.7mJ (on), 21.5mJ (off), Test Condition: 960V, 100A, 1Ohm, 15V, Gate Charge: 400 nC, Part Status: Active, Current - Collector (Ic) (Max): 320 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 800 A, Power - Max: 1500 W.
Weitere Produktangebote IXYX120N120B3 nach Preis ab 33.55 EUR bis 33.55 EUR
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IXYX120N120B3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 800A Mounting: THT Gate charge: 400nC Kind of package: tube Turn-on time: 84ns Turn-off time: 826ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYX120N120B3 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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| IXYX120N120B3 | Hersteller : IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 30ns/340ns Switching Energy: 9.7mJ (on), 21.5mJ (off) Test Condition: 960V, 100A, 1Ohm, 15V Gate Charge: 400 nC Part Status: Active Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 800 A Power - Max: 1500 W |
Produkt ist nicht verfügbar |
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IXYX120N120B3 | Hersteller : IXYS |
IGBT Transistors IGBT XPT-GENX3 |
Produkt ist nicht verfügbar |