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JAN1N3174

JAN1N3174 Microchip Technology

8953-lds-0140-pdf Hersteller: Microchip Technology
Description: DIODE GP 1KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Qualification: MIL-PRF-19500/211
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2380.58 EUR
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Technische Details JAN1N3174 Microchip Technology

Description: DIODE GP 1KV 300A DO205AB DO9, Packaging: Bulk, Package / Case: DO-205AB, DO-9, Stud, Mounting Type: Chassis, Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 300A, Supplier Device Package: DO-205AB (DO-9), Operating Temperature - Junction: -65°C ~ 200°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A, Current - Reverse Leakage @ Vr: 10 mA @ 1000 V, Qualification: MIL-PRF-19500/211.

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JAN1N3174 Hersteller : Microsemi lds-0140.pdf Rectifier Diode Switching 1KV 300A 2-Pin DO-9 Tray
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