Technische Details LSIC1MO170E1000 Littelfuse
Description: SICFET N-CH 1700V 5A TO247-3L, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V.
Weitere Produktangebote LSIC1MO170E1000 nach Preis ab 25.77 EUR bis 25.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| LSIC1MO170E1000 | Hersteller : LITTELFUSE |
 Trans MOSFET N-CH SiC 1.7KV 5A 3-Pin(3+Tab) TO-247 LSIC1MO170E1000 TLSIC1MO170E1000Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| LSIC1MO170E1000 | Hersteller : LITTELFUSE |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 15A; 54W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 54W Polarisation: unipolar Gate charge: 15nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 15A Drain-source voltage: 1.7kV Drain current: 3.5A On-state resistance: 1Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 450 Stücke |
Produkt ist nicht verfügbar |
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LSIC1MO170E1000 | Hersteller : Littelfuse Inc. |
Description: SICFET N-CH 1700V 5A TO247-3L Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V |
Produkt ist nicht verfügbar |
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| LSIC1MO170E1000 | Hersteller : LITTELFUSE |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 15A; 54W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 54W Polarisation: unipolar Gate charge: 15nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 15A Drain-source voltage: 1.7kV Drain current: 3.5A On-state resistance: 1Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |