MG25P12P3

MG25P12P3 Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+64.07 EUR
120+ 60.51 EUR
240+ 56.95 EUR
480+ 53.39 EUR
960+ 48.05 EUR
2400+ 44.49 EUR
Mindestbestellmenge: 24
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Technische Details MG25P12P3 Yangjie Technology

Description: Transistors - IGBTs - Modules P3, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A, NTC Thermistor: Yes, Part Status: Active, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 175 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V.

Weitere Produktangebote MG25P12P3 nach Preis ab 43.76 EUR bis 43.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MG25P12P3 Hersteller : Yangjie Electronic Technology MG25P12P3
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+43.76 EUR
Mindestbestellmenge: 24
MG25P12P3 Hersteller : YANGJIE TECHNOLOGY MG25P12P3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG25P12P3 Hersteller : YANGJIE TECHNOLOGY MG25P12P3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
Produkt ist nicht verfügbar