MIXA150R1200VA IXYS
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 695W
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 695W
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Technische Details MIXA150R1200VA IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Case: V1-A-Pack, Power dissipation: 695W, Gate-emitter voltage: ±20V, Collector current: 175A, Pulsed collector current: 450A, Application: fans; for pump; motors; photovoltaics, Electrical mounting: FASTON connectors, Mechanical mounting: screw, Type of module: IGBT, Technology: Sonic FRD™; XPT™, Topology: boost chopper, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MIXA150R1200VA
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MIXA150R1200VA | Hersteller : IXYS | Description: IGBT MODULE 1200V 150A HEX |
Produkt ist nicht verfügbar |
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MIXA150R1200VA | Hersteller : IXYS | IGBT Modules XPT IGBT Module |
Produkt ist nicht verfügbar |
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MIXA150R1200VA | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: V1-A-Pack Power dissipation: 695W Gate-emitter voltage: ±20V Collector current: 175A Pulsed collector current: 450A Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: boost chopper |
Produkt ist nicht verfügbar |