MIXA151W1200EH IXYS
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Collector current: 150A
Pulsed collector current: 340A
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Collector current: 150A
Pulsed collector current: 340A
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details MIXA151W1200EH IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: motors; photovoltaics, Collector current: 150A, Pulsed collector current: 340A, Power dissipation: 695W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge, Technology: Sonic FRD™; XPT™, Case: E3-Pack, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
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MIXA151W1200EH | Hersteller : IXYS | Description: IGBT MODULE 1200V 150A HEX |
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MIXA151W1200EH | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Collector current: 150A Pulsed collector current: 340A Power dissipation: 695W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge Technology: Sonic FRD™; XPT™ Case: E3-Pack Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |