Produkte > IXYS > MIXA151W1200EH

MIXA151W1200EH IXYS


MIXA151W1200EH.pdf Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Collector current: 150A
Pulsed collector current: 340A
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details MIXA151W1200EH IXYS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: motors; photovoltaics, Collector current: 150A, Pulsed collector current: 340A, Power dissipation: 695W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge, Technology: Sonic FRD™; XPT™, Case: E3-Pack, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote MIXA151W1200EH

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MIXA151W1200EH Hersteller : IXYS MIXA151W1200EH.pdf Description: IGBT MODULE 1200V 150A HEX
Produkt ist nicht verfügbar
MIXA151W1200EH MIXA151W1200EH Hersteller : IXYS MIXA151W1200EH-1548165.pdf IGBT Modules Six-Pack SPT IGBT
Produkt ist nicht verfügbar
MIXA151W1200EH Hersteller : IXYS MIXA151W1200EH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Collector current: 150A
Pulsed collector current: 340A
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar