MIXA225PF1200TSF IXYS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A, Case: SimBus F, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 250A, Pulsed collector current: 500A, Application: fans; for pump; for UPS; motors, Power dissipation: 1.1kW, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Sonic FRD™; XPT™, Topology: IGBT half-bridge; NTC thermistor, Anzahl je Verpackung: 1 Stücke.