auf Bestellung 6 Stücke:
Lieferzeit 1295-1299 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 124.75 EUR |
| 12+ | 118.52 EUR |
| 30+ | 115.39 EUR |
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Technische Details MIXA30WB1200TED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 30A, Application: motors; photovoltaics, Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Power dissipation: 150W, Technology: Sonic FRD™; XPT™, Mechanical mounting: screw, Pulsed collector current: 75A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of module: IGBT, Semiconductor structure: diode/transistor, Case: E2-Pack, Gate-emitter voltage: ±20V, Collector current: 30A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MIXA30WB1200TED
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MIXA30WB1200TED | Hersteller : IXYS |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 30A Application: motors; photovoltaics Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 150W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 75A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 30A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MIXA30WB1200TED | Hersteller : IXYS |
Description: IGBT MODULE 1200V 43A 150W E2 |
Produkt ist nicht verfügbar |
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| MIXA30WB1200TED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 30A Application: motors; photovoltaics Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 150W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 75A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 30A |
Produkt ist nicht verfügbar |