Technische Details MIXA61H1200ED IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W, Application: motors; photovoltaics, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 60A, Pulsed collector current: 150A, Power dissipation: 290W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Sonic FRD™; XPT™, Topology: H-bridge, Case: E2-Pack, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MIXA61H1200ED
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MIXA61H1200ED | Hersteller : IXYS |
 Description: IGBT MODULE 1200V 60A |
auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
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| MIXA61H1200ED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Application: motors; photovoltaics Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 150A Power dissipation: 290W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: H-bridge Case: E2-Pack Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MIXA61H1200ED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Application: motors; photovoltaics Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 150A Power dissipation: 290W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: H-bridge Case: E2-Pack |
Produkt ist nicht verfügbar |