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MIXA81H1200EH

MIXA81H1200EH IXYS


MIXA81H1200EH-1549371.pdf Hersteller: IXYS
IGBT Modules IGBT Module H Bridge
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Technische Details MIXA81H1200EH IXYS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W, Application: motors; photovoltaics, Topology: H-bridge, Power dissipation: 390W, Technology: Sonic FRD™; XPT™, Mechanical mounting: screw, Pulsed collector current: 225A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of module: IGBT, Semiconductor structure: transistor/transistor, Case: E3-Pack, Gate-emitter voltage: ±20V, Collector current: 84A, Anzahl je Verpackung: 1 Stücke.

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MIXA81H1200EH Hersteller : IXYS MIXA81H1200EH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Application: motors; photovoltaics
Topology: H-bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MIXA81H1200EH Hersteller : IXYS MIXA81H1200EH.pdf Description: IGBT MODULE 1200V 84A
Produkt ist nicht verfügbar
MIXA81H1200EH Hersteller : IXYS MIXA81H1200EH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Application: motors; photovoltaics
Topology: H-bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Produkt ist nicht verfügbar