MMIX1F40N110P IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 65.84 EUR |
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Technische Details MMIX1F40N110P IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W, Type of transistor: N-MOSFET, Technology: HiPerFET™; Polar™, Polarisation: unipolar, Drain-source voltage: 1.1kV, Drain current: 24A, Pulsed drain current: 100A, Power dissipation: 500W, Case: SMPD, Gate-source voltage: ±30V, On-state resistance: 0.29Ω, Mounting: SMD, Gate charge: 310nC, Kind of channel: enhanced, Reverse recovery time: 300ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MMIX1F40N110P nach Preis ab 65.84 EUR bis 65.84 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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MMIX1F40N110P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.1kV Drain current: 24A Pulsed drain current: 100A Power dissipation: 500W Case: SMPD Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 310nC Kind of channel: enhanced Reverse recovery time: 300ns |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX1F40N110P | Hersteller : IXYS | Description: MOSFET N-CH 1100V 24A SMPD |
Produkt ist nicht verfügbar |
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MMIX1F40N110P | Hersteller : IXYS | MOSFET SMPD MOSFETs Power Device |
Produkt ist nicht verfügbar |