MMIX1F44N100Q3 IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Mounting: SMD
Reverse recovery time: 300ns
Case: SMPD
Power dissipation: 694W
Technology: HiPerFET™; Q3-Class
Pulsed drain current: 110A
Gate charge: 264nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Mounting: SMD
Reverse recovery time: 300ns
Case: SMPD
Power dissipation: 694W
Technology: HiPerFET™; Q3-Class
Pulsed drain current: 110A
Gate charge: 264nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 58.39 EUR |
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Technische Details MMIX1F44N100Q3 IXYS
Description: MOSFET N-CH 1000V 30A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Weitere Produktangebote MMIX1F44N100Q3 nach Preis ab 58.39 EUR bis 58.39 EUR
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MMIX1F44N100Q3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W Mounting: SMD Reverse recovery time: 300ns Case: SMPD Power dissipation: 694W Technology: HiPerFET™; Q3-Class Pulsed drain current: 110A Gate charge: 264nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 245mΩ |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX1F44N100Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 30A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
Produkt ist nicht verfügbar |
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MMIX1F44N100Q3 | Hersteller : IXYS | MOSFET HiperFET Pwr MOSFET Q3-Class |
Produkt ist nicht verfügbar |