MSC035SMA070S MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Technology: SiC
Mounting: SMD
Case: D3PAK
Power dissipation: 206W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 163A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhanced
Drain-source voltage: 700V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Technology: SiC
Mounting: SMD
Case: D3PAK
Power dissipation: 206W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 163A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhanced
Drain-source voltage: 700V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 18.89 EUR |
5+ | 17.86 EUR |
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Technische Details MSC035SMA070S MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 700V D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V, Power Dissipation (Max): 206W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 1mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V.
Weitere Produktangebote MSC035SMA070S nach Preis ab 17.86 EUR bis 31.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MSC035SMA070S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W Technology: SiC Mounting: SMD Case: D3PAK Power dissipation: 206W Type of transistor: N-MOSFET On-state resistance: 44mΩ Pulsed drain current: 163A Gate charge: 99nC Polarisation: unipolar Drain current: 46A Kind of channel: enhanced Drain-source voltage: 700V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC035SMA070S | Hersteller : Microchip Technology | MOSFET UNRLS, FG, SIC MOSFET, TO-268 |
auf Bestellung 159 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC035SMA070S | Hersteller : Microchip Technology |
Description: MOSFET N-CH 700V D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Power Dissipation (Max): 206W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC035SMA070S | Hersteller : Microsemi | MSC035SMA070S |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC035SMA070S | Hersteller : Microchip Technology | 700V Silicon Carbide (SiC) MOSFET |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC035SMA070S | Hersteller : Microchip Technology | MSC035SMA070S |
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