MSJP11N80A-BP Micro Commercial Components (MCC)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 6 EUR |
10+ | 5.03 EUR |
25+ | 4.77 EUR |
100+ | 4.1 EUR |
250+ | 3.85 EUR |
500+ | 3.63 EUR |
1000+ | 3.12 EUR |
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Technische Details MSJP11N80A-BP Micro Commercial Components (MCC)
Description: N-CHANNEL MOSFET, TO-220AB(H), Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V, Power Dissipation (Max): 250W (Tj), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220AB (H), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 918 pF @ 400 V.
Weitere Produktangebote MSJP11N80A-BP nach Preis ab 2.94 EUR bis 6.05 EUR
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MSJP11N80A-BP | Hersteller : Micro Commercial Co |
Description: N-CHANNEL MOSFET, TO-220AB(H) Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V Power Dissipation (Max): 250W (Tj) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB (H) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 918 pF @ 400 V |
auf Bestellung 4992 Stücke: Lieferzeit 10-14 Tag (e) |
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