MUN2216T1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.056 EUR |
6000+ | 0.052 EUR |
9000+ | 0.043 EUR |
30000+ | 0.042 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MUN2216T1G onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 338 mW, Resistor - Base (R1): 4.7 kOhms.
Weitere Produktangebote MUN2216T1G nach Preis ab 0.033 EUR bis 0.38 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MUN2216T1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2216T1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2216T1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2216T1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2216T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 47150 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2216T1G | Hersteller : onsemi | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V |
auf Bestellung 10330 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2216T1G |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN2216T1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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MUN2216T1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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MUN2216T1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |