MUN5213T1G ON Semiconductor
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30000+ | 0.028 EUR |
| 45000+ | 0.021 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MUN5213T1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-70-3 (SOT323), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 202 mW, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote MUN5213T1G nach Preis ab 0.02 EUR bis 0.28 EUR
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MUN5213T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5213T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5213T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5213T1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Current gain: 140 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5055 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5213T1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Current gain: 140 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 5055 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5213T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 1871 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5213T1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 28489 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5213T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 26158 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5213T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 1871 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5213T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5213T1G | Hersteller : ON-Semicoductor |
NPN 50V 100mA 202mW MUN5213T1G ONSemiconductor TMUN5213 Anzahl je Verpackung: 500 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5213T1G | Hersteller : ONSEMI |
Description: ONSEMI - MUN5213T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 536000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5213T1G Produktcode: 177311 |
Transistoren > Bipolar-Transistoren NPN |
Produkt ist nicht verfügbar
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MUN5213T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |