Technische Details MWI50-12E6K IXYS
Description: IGBT MODULE 1200V 51A 210W E1, Packaging: Box, Package / Case: E1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: E1, Current - Collector (Ic) (Max): 51 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 210 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.
Weitere Produktangebote MWI50-12E6K
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MWI50-12E6K | Hersteller : IXYS |
 Description: IGBT MODULE 1200V 51A 210W E1Packaging: Box Package / Case: E1 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: E1 Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 210 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
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