ND104N16KHPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE GEN PURP 1.6KV 104A PB20-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 186.49 EUR |
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Technische Details ND104N16KHPSA1 Infineon Technologies
Description: DIODE GEN PURP 1.6KV 104A PB20-1, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 104A, Supplier Device Package: BG-PB20-1, Operating Temperature - Junction: -40°C ~ 135°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1600 V, Current - Reverse Leakage @ Vr: 20 mA @ 1600 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| ND104N16KHPSA1 | Hersteller : Infineon Technologies |
Description: DIODE GEN PURP 1.6KV 104A PB20-1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 104A Supplier Device Package: BG-PB20-1 Operating Temperature - Junction: -40°C ~ 135°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1600 V Current - Reverse Leakage @ Vr: 20 mA @ 1600 V |
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