NDP603AL Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 30V 25A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 34234 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 952+ | 0.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NDP603AL Fairchild Semiconductor
Description: MOSFET N-CH 30V 25A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V.
Weitere Produktangebote NDP603AL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NDP603AL | Hersteller : NS |
09+ |
auf Bestellung 1318 Stücke: Lieferzeit 21-28 Tag (e) |
||
| NDP603AL | Hersteller : NSC |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
NDP603AL | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 25A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
|
 |
NDP603AL | Hersteller : onsemi |
Description: MOSFET N-CH 30V 25A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V |
Produkt ist nicht verfügbar |
|
 |
NDP603AL | Hersteller : onsemi / Fairchild |
MOSFET N-Channel FET LL Enhancement |
Produkt ist nicht verfügbar |