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NE856M02-T1-AZ

NE856M02-T1-AZ CEL


ne856m02.pdf Hersteller: CEL
Description: SAME AS 2SC5336 NPN SILICON AMPL
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 1.2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: SOT-89
Part Status: Last Time Buy
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Technische Details NE856M02-T1-AZ CEL

Description: SAME AS 2SC5336 NPN SILICON AMPL, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 12dB, Power - Max: 1.2W, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V, Frequency - Transition: 6.5GHz, Noise Figure (dB Typ @ f): 1.8dB @ 1GHz, Supplier Device Package: SOT-89, Part Status: Last Time Buy.

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