NJW44H11G onsemi
Hersteller: onsemi
Bipolar Transistors - BJT NPN Power Bipolar Transistor, 80 V, 10 A NPN TO-3P POWER TRANS
Bipolar Transistors - BJT NPN Power Bipolar Transistor, 80 V, 10 A NPN TO-3P POWER TRANS
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.75 EUR |
10+ | 3.84 EUR |
120+ | 2.83 EUR |
270+ | 2.59 EUR |
510+ | 2.43 EUR |
1020+ | 2.15 EUR |
2550+ | 2.08 EUR |
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Technische Details NJW44H11G onsemi
Description: TRANS NPN 80V 10A TO3P-3L, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V, Frequency - Transition: 85MHz, Supplier Device Package: TO-3P-3L, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 120 W.
Weitere Produktangebote NJW44H11G nach Preis ab 3.85 EUR bis 4.79 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NJW44H11G | Hersteller : onsemi |
Description: TRANS NPN 80V 10A TO3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V Frequency - Transition: 85MHz Supplier Device Package: TO-3P-3L Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 120 W |
auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) |
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NJW44H11G | Hersteller : ON Semiconductor | Trans GP BJT NPN 80V 10A 120000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |